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METHOD:PUBLISH
CALSCALE:GREGORIAN
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X-ORIGINAL-URL:https://sfera.mo.it/
X-WR-CALNAME:SFERA . Marco Tognella
X-WR-CALDESC:Agenzia per l'elettronica
REFRESH-INTERVAL;VALUE=DURATION:PT1H
X-PUBLISHED-TTL:PT1H
X-MS-OLK-FORCEINSPECTOROPEN:TRUE
BEGIN:VEVENT
CLASS:PUBLIC
DTSTART;TZID=Europe/Rome:20200506T190000
DTEND;TZID=Europe/Rome:20200506T200000
DTSTAMP:20200506T055300
UID:MEC-aace49c7d80767cffec0e513ae886df0@sfera.mo.it
CREATED:20200506
LAST-MODIFIED:20200506
PRIORITY:5
TRANSP:OPAQUE
SUMMARY:Webinar EPC – Understanding Why GaN is More Robust than Silicon Power MOSFETs
DESCRIPTION:Join the webinar to discover the critical aspects of GaN power device reliability and how testing gallium nitride devices to failure demonstrates robustness unmatched by silicon power MOSFETs.\nQuando: 10:00 AM Pacific Daylight Time; 19,00 ora italiana\nDurata stimata: 60 minuti\nLingua Inglese\nEPC: sito del Costruttore ( https://epc-co.com/epc/ )\nPer informazioni ed iscrizioni: m.tognella@melchioni.it ( mailto:m.tognella@melchioni.it )\n
URL:https://sfera.mo.it/events/webinar-epc-understanding-why-gan-is-more-robust-than-silicon-power-mosfets/
CATEGORIES:webinar
END:VEVENT
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